Researchers at Rensselaer Polytechnic Institute and the University of New Mexico were awarded a U.S. patent for a new process for inexpensively growing large area cubic gallium nitride devices, or GaN. The team is developing an LED manufacturing processes that will improve the performance of LEDs by enhancing their brightness, color spectrum and efficiency. The material will be used in lighting for homes and high-efficiency power electronics. These institutions were able to share data throughout this study due to NYSERNet’s R&E network.